All MOSFET. TMAN20N60 Datasheet

 

TMAN20N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMAN20N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO-3PN

 TMAN20N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMAN20N60 Datasheet (PDF)

 ..1. Size:694K  trinnotech
 tman20n60.pdf

TMAN20N60 TMAN20N60

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A

 0.1. Size:505K  trinnotech
 tman20n60a.pdf

TMAN20N60 TMAN20N60

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 7.1. Size:484K  trinnotech
 tman20n50.pdf

TMAN20N60 TMAN20N60

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

 7.2. Size:503K  trinnotech
 tman20n50a.pdf

TMAN20N60 TMAN20N60

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CSN06N3P6

 

 
Back to Top