TMAN20N60 Datasheet and Replacement
Type Designator: TMAN20N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 347 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 146 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO-3PN
TMAN20N60 substitution
TMAN20N60 Datasheet (PDF)
tman20n60.pdf

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A
tman20n60a.pdf

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A
tman20n50.pdf

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A
tman20n50a.pdf

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A
Datasheet: TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 , TMAN20N50A , 2N7002 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z .
History: MMIX1F160N30T | F6N90 | CEP05N8 | NTMS4N01R2G | 12N70G-TA3-T | CS04CN10 | BUK7Y9R9-80E
Keywords - TMAN20N60 MOSFET datasheet
TMAN20N60 cross reference
TMAN20N60 equivalent finder
TMAN20N60 lookup
TMAN20N60 substitution
TMAN20N60 replacement
History: MMIX1F160N30T | F6N90 | CEP05N8 | NTMS4N01R2G | 12N70G-TA3-T | CS04CN10 | BUK7Y9R9-80E



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