All MOSFET. TMAN23N50A Datasheet

 

TMAN23N50A Datasheet and Replacement


   Type Designator: TMAN23N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-3PN
 

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TMAN23N50A Datasheet (PDF)

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TMAN23N50A

TMAN23N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

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TMAN23N50A

TMAN23N50 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A

 9.1. Size:484K  trinnotech
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TMAN23N50A

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

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TMAN23N50A

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

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History: AUIRFSL8409 | IRF120

Keywords - TMAN23N50A MOSFET datasheet

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