TMAN9N90 Datasheet and Replacement
Type Designator: TMAN9N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 184 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PN
TMAN9N90 substitution
TMAN9N90 Datasheet (PDF)
tman9n90.pdf
TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V
tman9n90az.pdf
TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A
Datasheet: TMAN20N50 , TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , IRFP064N , TMAN9N90AZ , TMD16N25Z , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG .
History: R9523 | C2M065W060 | 2SK299 | LN2306LT1G | AOB190A60CL | JMSH1008AC | 2SK3666-3-TB-E
Keywords - TMAN9N90 MOSFET datasheet
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History: R9523 | C2M065W060 | 2SK299 | LN2306LT1G | AOB190A60CL | JMSH1008AC | 2SK3666-3-TB-E
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