TMAN9N90 Datasheet and Replacement
Type Designator: TMAN9N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 9.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 184 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PN
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TMAN9N90 Datasheet (PDF)
tman9n90.pdf
TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V
tman9n90az.pdf
TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: JCS730FC | BUZ84 | IRLR024 | AON6794 | AFN7424S | CED05N8 | BL10N70-A
Keywords - TMAN9N90 MOSFET datasheet
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History: JCS730FC | BUZ84 | IRLR024 | AON6794 | AFN7424S | CED05N8 | BL10N70-A
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