TMAN9N90 PDF and Equivalents Search

 

TMAN9N90 Specs and Replacement

Type Designator: TMAN9N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 184 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-3PN

TMAN9N90 substitution

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TMAN9N90 datasheet

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TMAN9N90

TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V ... See More ⇒

 0.1. Size:451K  trinnotech
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TMAN9N90

TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A ... See More ⇒

Detailed specifications: TMAN20N50, TMAN20N50A, TMAN20N60, TMAN20N60A, TMAN23N50, TMAN23N50A, TMAN7N90, TMAN8N80, IRF730, TMAN9N90AZ, TMD16N25Z, TMD18N20Z, TMD2N40, TMD2N60AZ, TMD2N60Z, TMD2N65AZ, TMD3N40ZG

Keywords - TMAN9N90 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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