TMAN9N90 Datasheet and Replacement
Type Designator: TMAN9N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 65 nC
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 184 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PN
TMAN9N90 substitution
TMAN9N90 Datasheet (PDF)
tman9n90.pdf
TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V
tman9n90az.pdf
TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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