All MOSFET. TMAN9N90 Datasheet

 

TMAN9N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMAN9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 184 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-3PN

 TMAN9N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMAN9N90 Datasheet (PDF)

 ..1. Size:428K  trinnotech
 tman9n90.pdf

TMAN9N90 TMAN9N90

TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V

 0.1. Size:451K  trinnotech
 tman9n90az.pdf

TMAN9N90 TMAN9N90

TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PSMN013-100ES | CSD19536KCS | SRC60R090B | SRC65R082B

 

 
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