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TMAN9N90AZ Specs and Replacement

Type Designator: TMAN9N90AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 97 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-3PN

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TMAN9N90AZ datasheet

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TMAN9N90AZ

TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A ... See More ⇒

 6.1. Size:428K  trinnotech
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TMAN9N90AZ

TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V ... See More ⇒

Detailed specifications: TMAN20N50A, TMAN20N60, TMAN20N60A, TMAN23N50, TMAN23N50A, TMAN7N90, TMAN8N80, TMAN9N90, IRFZ44N, TMD16N25Z, TMD18N20Z, TMD2N40, TMD2N60AZ, TMD2N60Z, TMD2N65AZ, TMD3N40ZG, TMD3N50AZ

Keywords - TMAN9N90AZ MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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