All MOSFET. TMAN9N90AZ Datasheet

 

TMAN9N90AZ Datasheet and Replacement


   Type Designator: TMAN9N90AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 72 nC
   tr ⓘ - Rise Time: 97 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-3PN
 

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TMAN9N90AZ Datasheet (PDF)

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TMAN9N90AZ

TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A

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TMAN9N90AZ

TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V

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