TMAN9N90AZ Datasheet and Replacement
Type Designator: TMAN9N90AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 97 nS
Cossⓘ - Output Capacitance: 192 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PN
TMAN9N90AZ substitution
TMAN9N90AZ Datasheet (PDF)
tman9n90az.pdf

TMAN9N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A
tman9n90.pdf

TMAN9N90 VDSS = 990 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3PN G S Device Package Marking Remark TMAN9N90 TO-3P TMAN9N90 RoHS Absolute Maximum Ratings Parameter Symbol TMAN9N90 Unit Drain-Source Voltage VDS 900 V
Datasheet: TMAN20N50A , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , IRFZ44N , TMD16N25Z , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ .
History: SLP8N60C | AONV110A60 | ISCNH320K | FTA02N60C | 2SK3030 | 2302P | AONR36329
Keywords - TMAN9N90AZ MOSFET datasheet
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History: SLP8N60C | AONV110A60 | ISCNH320K | FTA02N60C | 2SK3030 | 2302P | AONR36329



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