TMD16N25Z Datasheet and Replacement
Type Designator: TMD16N25Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 93.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 152 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: DPAK
TMD16N25Z substitution
TMD16N25Z Datasheet (PDF)
tmd16n25z tmu16n25z.pdf
TMD16N25Z(G)/TMU16N25Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A
Datasheet: TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , IRF3205 , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , TMD3N50Z .
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