TMD16N25Z MOSFET. Datasheet pdf. Equivalent
Type Designator: TMD16N25Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 93.9 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 51 nS
Drain-Source Capacitance (Cd): 152 pF
Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm
Package: DPAK
TMD16N25Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMD16N25Z Datasheet (PDF)
0.1. tmd16n25z tmu16n25z.pdf 
Size:471K _trinnotech
TMD16N25Z(G)/TMU16N25Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A <0.24W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD16N25Z / TMU16N25Z D-PAK/I-PAK TMD16N25Z / TMU16N25Z RoHS TMD16N25ZG / TMU16N25ZG D-PAK/I-PAK
Datasheet: TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , IRFZ44N , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , TMD3N50Z .
