TMD16N25Z PDF and Equivalents Search

 

TMD16N25Z Specs and Replacement

Type Designator: TMD16N25Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 152 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: DPAK

TMD16N25Z substitution

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TMD16N25Z datasheet

 ..1. Size:471K  trinnotech
 tmd16n25z tmu16n25z.pdf pdf_icon

TMD16N25Z

TMD16N25Z(G)/TMU16N25Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A ... See More ⇒

Detailed specifications: TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , IRF3205 , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , TMD3N50Z .

Keywords - TMD16N25Z MOSFET specs

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