TMD3N50AZ MOSFET Datasheet: N-Ch, 500V, 2.5A. Full specification with pinout and replacement list

TMD3N50AZ Specs and Replacement

Type Designator: TMD3N50AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: DPAK

TMD3N50AZ substitution

- MOSFET ⓘ Cross-Reference Search

TMD3N50AZ datasheet

..1. Size:454K trinnotech
tmd3n50az tmu3n50az.pdf pdf_icon

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒

7.1. Size:467K trinnotech
tmd3n50z tmu3n50z.pdf pdf_icon

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒

9.1. Size:159K onsemi
ntmd3n08lr2.pdf pdf_icon

NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http //onsemi.com Features Ultra Low On-Resistance Provides Higher Efficiency 2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V 80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses 215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutio... See More ⇒

9.2. Size:334K trinnotech
tmd3n80g tmu3n80g.pdf pdf_icon

TMD3N80G/TMU3N80G Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen Free Absolute Maximum Ratings Parameter ... See More ⇒