All MOSFET. TMD3N50AZ Datasheet

 

TMD3N50AZ MOSFET. Datasheet pdf. Equivalent

Type Designator: TMD3N50AZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52.1 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8 nC

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 46 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: DPAK

TMD3N50AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMD3N50AZ Datasheet (PDF)

1.1. tmd3n50az.pdf Size:454K _upd-mosfet

TMD3N50AZ
TMD3N50AZ

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A < 2.8W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD3N50AZ / TMU3N50AZ D-PAK/I-PAK TMD3N50AZ / TMU3N50AZ RoHS TMD3N

3.1. tmd3n50z.pdf Size:467K _upd-mosfet

TMD3N50AZ
TMD3N50AZ

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A <2.8W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N50Z / TMU3N50Z D-PAK/I-PAK TMD3N50Z / TMU3N50Z RoHS TMD3N50ZG / TMU3N50ZG D-PAK/I-PAK TMD3N50ZG

 5.1. tmd3n90.pdf Size:829K _upd-mosfet

TMD3N50AZ
TMD3N50AZ

 TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 2.5A <5.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N90/ TMU3N90 D-PAK/I-PAK TMD3N90 / TMU3N90 RoHS TMD3N90G / TMU3N90G D-PAK/I-PAK TMD3N90G / TMU3

5.2. tmd3n80g.pdf Size:334K _upd-mosfet

TMD3N50AZ
TMD3N50AZ

TMD3N80G/TMU3N80G Features VDSS = 880 V @Tjmax  Low gate charge ID = 3A  100% avalanche tested  Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen Free Absolute Maximum Ratings Parameter

 5.3. tmd3n40zg.pdf Size:537K _upd-mosfet

TMD3N50AZ
TMD3N50AZ

TMD3N40ZG/TMU3N40ZG Features VDSS = 440 V @Tjmax  Low gate charge ID = 2A  100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark TMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free

5.4. ntmd3n08lr2.pdf Size:159K _onsemi

TMD3N50AZ
TMD3N50AZ

NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http://onsemi.com Features Ultra Low On-Resistance Provides Higher Efficiency 2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V 80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses 215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutions in 42 V Auto

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top

 


TMD3N50AZ
  TMD3N50AZ
  TMD3N50AZ
  TMD3N50AZ
 

social 

LIST

Last Update

MOSFET: PH3830L | PH3430AL | PH3330L | PH3230S | PH3030AL | PH2625L | PH2530AL | PH2525L | PH20100S | PH1955L | PH1930AL | PH1875L | PH1825AL | PH1730AL | PH16030L |

 

 

 
Back to Top