All MOSFET. TMD3N50AZ Datasheet

 

TMD3N50AZ Datasheet and Replacement


   Type Designator: TMD3N50AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: DPAK
 

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TMD3N50AZ Datasheet (PDF)

 ..1. Size:454K  trinnotech
 tmd3n50az tmu3n50az.pdf pdf_icon

TMD3N50AZ

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 7.1. Size:467K  trinnotech
 tmd3n50z tmu3n50z.pdf pdf_icon

TMD3N50AZ

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 9.1. Size:159K  onsemi
 ntmd3n08lr2.pdf pdf_icon

TMD3N50AZ

NTMD3N08LR2Power MOSFET2.3 Amps, 80 VoltsN-Channel Enhancement-ModeSO-8 Dual Packagehttp://onsemi.comFeatures Ultra Low On-Resistance Provides Higher Efficiency2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutio

 9.2. Size:334K  trinnotech
 tmd3n80g tmu3n80g.pdf pdf_icon

TMD3N50AZ

TMD3N80G/TMU3N80GFeaturesVDSS = 880 V @Tjmax Low gate chargeID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC QualificationD-PAK DI-PAKGSDevice Package Marking RemarkTMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen FreeAbsolute Maximum Ratings Parameter

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Keywords - TMD3N50AZ MOSFET datasheet

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