TMD3N50AZ - Даташиты. Аналоги. Основные параметры

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http //onsemi.com Features Ultra Low On-Resistance Provides Higher Efficiency 2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V 80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses 215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutio

TMD3N80G/TMU3N80G Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen Free Absolute Maximum Ratings Parameter

TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

TMD3N40ZG/TMU3N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 2A 100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark TMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free