TMD3N50Z Datasheet: MOSFET, N-Ch, 500V, 2.5A. Full specification with pinout and replacement list

TMD3N50Z Datasheet. Specs and Replacement

Type Designator: TMD3N50Z 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: DPAK

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TMD3N50Z datasheet

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TMD3N80G/TMU3N80G Features VDSS = 880 V @Tjmax Low gate charge ID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen Free Absolute Maximum Ratings Parameter ... See More ⇒