All MOSFET. TMD3N50Z Datasheet

 

TMD3N50Z MOSFET. Datasheet pdf. Equivalent

Type Designator: TMD3N50Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 9.2 nC

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 44 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: DPAK

TMD3N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMD3N50Z Datasheet (PDF)

1.1. tmd3n50z.pdf Size:467K _upd-mosfet

TMD3N50Z TMD3N50Z

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A <2.8W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N50Z / TMU3N50Z D-PAK/I-PAK TMD3N50Z / TMU3N50Z RoHS TMD3N50ZG / TMU3N50ZG D-PAK/I-PAK TMD3N50ZG

3.1. tmd3n50az.pdf Size:454K _upd-mosfet

TMD3N50Z TMD3N50Z

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 2.5A < 2.8W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD3N50AZ / TMU3N50AZ D-PAK/I-PAK TMD3N50AZ / TMU3N50AZ RoHS TMD3N

 5.1. tmd3n90.pdf Size:829K _upd-mosfet

TMD3N50Z TMD3N50Z

 TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 2.5A <5.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD3N90/ TMU3N90 D-PAK/I-PAK TMD3N90 / TMU3N90 RoHS TMD3N90G / TMU3N90G D-PAK/I-PAK TMD3N90G / TMU3

5.2. tmd3n80g.pdf Size:334K _upd-mosfet

TMD3N50Z TMD3N50Z

TMD3N80G/TMU3N80G Features VDSS = 880 V @Tjmax  Low gate charge ID = 3A  100% avalanche tested  Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen Free Absolute Maximum Ratings Parameter

 5.3. tmd3n40zg.pdf Size:537K _upd-mosfet

TMD3N50Z TMD3N50Z

TMD3N40ZG/TMU3N40ZG Features VDSS = 440 V @Tjmax  Low gate charge ID = 2A  100% avalanche tested RDS(on) = 3.4 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D D-PAK I-PAK G S Device Package Marking Remark TMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free

5.4. ntmd3n08lr2.pdf Size:159K _onsemi

TMD3N50Z TMD3N50Z

NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http://onsemi.com Features • Ultra Low On-Resistance Provides Higher Efficiency 2.3 AMPERES ¦ RDS(on) = 0.215 W, VGS = 10 V 80 VOLTS ¦ RDS(on) = 0.245 W, VGS = 5.0 V • Low Reverse Recovery Losses 215 mW @ VGS = 5 V (Typ) • Internal RG = 50 W • Designed for Power Management Solutions in 42 V Auto

Datasheet: TMD16N25Z , TMD18N20Z , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , 2N7000 , TMD3N80G , TMD3N90 , TMD4N60 , TMD4N60AZ , TMD4N65AZ , TMD4N65Z , TMD5N40ZG , TMD5N50 .

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