TMD4N60AZ MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

TMD4N60AZ Specs and Replacement

Type Designator: TMD4N60AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: DPAK

TMD4N60AZ substitution

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TMD4N60AZ datasheet

..1. Size:464K trinnotech
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TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A ... See More ⇒

7.1. Size:317K trinnotech
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TMD4N60/TMU4N60 TMD4N60G/TMU4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHS TMD4N60G/TMU4N60G D-PAK/I-PAK ... See More ⇒

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TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf... See More ⇒

8.1. Size:453K trinnotech
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