All MOSFET. TMD4N65AZ Datasheet

 

TMD4N65AZ Datasheet and Replacement


   Type Designator: TMD4N65AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: DPAK
 

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TMD4N65AZ Datasheet (PDF)

 ..1. Size:453K  trinnotech
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TMD4N65AZ

TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 7.1. Size:475K  trinnotech
 tmd4n65z tmu4n65z.pdf pdf_icon

TMD4N65AZ

TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 8.1. Size:317K  trinnotech
 tmd4n60 tmu4n60.pdf pdf_icon

TMD4N65AZ

TMD4N60/TMU4N60TMD4N60G/TMU4N60GVDSS = 660 V @TjmaxFeaturesID = 4A Low gate chargeRDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHSTMD4N60G/TMU4N60G D-PAK/I-PAK

 8.2. Size:464K  trinnotech
 tmd4n60az tmu4n60az.pdf pdf_icon

TMD4N65AZ

TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

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Keywords - TMD4N65AZ MOSFET datasheet

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