TMD4N65AZ MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

TMD4N65AZ Specs and Replacement

Type Designator: TMD4N65AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: DPAK

TMD4N65AZ substitution

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TMD4N65AZ datasheet

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TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒

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TMD4N65Z(G)/TMU4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒

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TMD4N60/TMU4N60 TMD4N60G/TMU4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHS TMD4N60G/TMU4N60G D-PAK/I-PAK ... See More ⇒

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