TMD5N40ZG MOSFET. Datasheet pdf. Equivalent
Type Designator: TMD5N40ZG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.1 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 56 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: DPAK
TMD5N40ZG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMD5N40ZG Datasheet (PDF)
tmd5n40zg tmu5n40zg.pdf
TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso
tmd5n60z tmu5n60z.pdf
TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 4.2A
tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf
TMD5N50/TMU5N50TMD5N50G/TMU5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DI-PAKD-PAKGSDevice Package Marking RemarkTMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS
tmd5n60az tmu5n60az.pdf
TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STP8NM60D | AM8205 | MTD6N20E | HY3408 | PM523BA | PM606BA
History: STP8NM60D | AM8205 | MTD6N20E | HY3408 | PM523BA | PM606BA
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