TMD5N40ZG MOSFET Datasheet: N-Ch, 400V, 3.4A. Full specification with pinout and replacement list

TMD5N40ZG Specs and Replacement

Type Designator: TMD5N40ZG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: DPAK

TMD5N40ZG substitution

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TMD5N40ZG datasheet

..1. Size:617K trinnotech
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TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax Low gate charge ID = 3.4A 100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V Improved dv/dt capability Halogen free package JEDEC Qualification Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso... See More ⇒

9.1. Size:461K trinnotech
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TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 4.2A ... See More ⇒

9.2. Size:345K trinnotech
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TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax Low gate charge ID = 4.5A 100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS ... See More ⇒

9.3. Size:457K trinnotech
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