TMD830Z Datasheet. Specs and Replacement

Type Designator: TMD830Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: DPAK

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TMD830Z datasheet

 ..1. Size:465K  trinnotech
 tmd830z tmu830z.pdf pdf_icon

TMD830Z

TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

 8.1. Size:468K  trinnotech
 tmd830 tmu830.pdf pdf_icon

TMD830Z

TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A ... See More ⇒

 8.2. Size:451K  trinnotech
 tmd830az tmu830az.pdf pdf_icon

TMD830Z

TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

Detailed specifications: TMD630Z, TMD6N65G, TMD6N70, TMD7N60Z, TMD7N65AZ, TMD7N65Z, TMD830, TMD830AZ, 2SK3878, TMD8N25Z, TMD8N50Z, TMD8N60AZ, TMP10N60, TMP10N60A, TMP10N65, TMP10N65A, TMP10N80

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