All MOSFET. TMD830Z Datasheet

 

TMD830Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMD830Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK

 TMD830Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMD830Z Datasheet (PDF)

 ..1. Size:465K  trinnotech
 tmd830z tmu830z.pdf

TMD830Z TMD830Z

TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 8.1. Size:468K  trinnotech
 tmd830 tmu830.pdf

TMD830Z TMD830Z

TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A

 8.2. Size:451K  trinnotech
 tmd830az tmu830az.pdf

TMD830Z TMD830Z

TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTP3055E

 

 
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