All MOSFET. TMD830Z Datasheet

 

TMD830Z Datasheet and Replacement


   Type Designator: TMD830Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK
      - MOSFET Cross-Reference Search

 

TMD830Z Datasheet (PDF)

 ..1. Size:465K  trinnotech
 tmd830z tmu830z.pdf pdf_icon

TMD830Z

TMD830Z(G)/TMU830Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 8.1. Size:468K  trinnotech
 tmd830 tmu830.pdf pdf_icon

TMD830Z

TMD830(G)/TMU830(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 4.5A

 8.2. Size:451K  trinnotech
 tmd830az tmu830az.pdf pdf_icon

TMD830Z

TMD830AZ(G)/TMU830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: G68 | BRCS200P03DP | IRFB3004GPBF | AOB11S60 | STD65N55F3 | LKK47-06C5 | TSM4424CS

Keywords - TMD830Z MOSFET datasheet

 TMD830Z cross reference
 TMD830Z equivalent finder
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