TMD8N25Z Datasheet and Replacement
Type Designator: TMD8N25Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 8.4 nC
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 74 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: DPAK
TMD8N25Z substitution
TMD8N25Z Datasheet (PDF)
tmd8n25z tmu8n25z.pdf

TMD8N25Z(G)/TMU8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A
tmd8n60az tmu8n60az.pdf

TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A
tmd8n50z tmu8n50z.pdf

TMD8N50Z(G)/TMU8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A
tma8n60h tmd8n60h tmu8n60h.pdf

TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRF540NSPBF
Keywords - TMD8N25Z MOSFET datasheet
TMD8N25Z cross reference
TMD8N25Z equivalent finder
TMD8N25Z lookup
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TMD8N25Z replacement
History: IRF540NSPBF



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