All MOSFET. TMD8N50Z Datasheet

 

TMD8N50Z Datasheet and Replacement


   Type Designator: TMD8N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: DPAK
      - MOSFET Cross-Reference Search

 

TMD8N50Z Datasheet (PDF)

 ..1. Size:452K  trinnotech
 tmd8n50z tmu8n50z.pdf pdf_icon

TMD8N50Z

TMD8N50Z(G)/TMU8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

 9.1. Size:450K  trinnotech
 tmd8n25z tmu8n25z.pdf pdf_icon

TMD8N50Z

TMD8N25Z(G)/TMU8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A

 9.2. Size:472K  trinnotech
 tmd8n60az tmu8n60az.pdf pdf_icon

TMD8N50Z

TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 9.3. Size:470K  cn wuxi unigroup
 tma8n60h tmd8n60h tmu8n60h.pdf pdf_icon

TMD8N50Z

TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-

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History: WMM11N80M3 | FDMS9620S

Keywords - TMD8N50Z MOSFET datasheet

 TMD8N50Z cross reference
 TMD8N50Z equivalent finder
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