TMD8N50Z MOSFET. Datasheet pdf. Equivalent
Type Designator: TMD8N50Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 21 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 132 pF
Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
Package: DPAK
TMD8N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMD8N50Z Datasheet (PDF)
0.1. tmd8n50z tmu8n50z.pdf 
Size:452K _trinnotech
TMD8N50Z(G)/TMU8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A <0.85W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD8N50Z/TMU8N50Z D-PAK/I-PAK TMD8N50Z/TMU8N50Z RoHS TMD8N50ZG/TMU8N50ZG D-PAK/I-PAK TMD8N50ZG/TMU8
9.1. tmd8n60az tmu8n60az.pdf Size:472K _trinnotech
TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A <1.2W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD8N60AZ / TMU8N60AZ D-PAK/I-PAK TMD8N60AZ / TMU8N60AZ RoHS TMD8N6
9.2. tmd8n25z tmu8n25z.pdf Size:450K _trinnotech
TMD8N25Z(G)/TMU8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A <0.6W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD8N25Z/TMU8N25Z D-PAK/I-PAK TMD8N25Z/TMU8N25Z RoHS TMD8N25ZG/TMU8N25ZG D-PAK/I-PAK TMD8N25ZG/TMU8
Datasheet: TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z , TMD830 , TMD830AZ , TMD830Z , TMD8N25Z , IRFZ44V , TMD8N60AZ , TMP10N60 , TMP10N60A , TMP10N65 , TMP10N65A , TMP10N80 , TMP11N50 , TMP11N50SG .
