TMD8N50Z Datasheet. Specs and Replacement

Type Designator: TMD8N50Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: DPAK

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TMD8N50Z datasheet

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TMD8N50Z

TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-... See More ⇒

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Detailed specifications: TMD6N70, TMD7N60Z, TMD7N65AZ, TMD7N65Z, TMD830, TMD830AZ, TMD830Z, TMD8N25Z, IRF9540N, TMD8N60AZ, TMP10N60, TMP10N60A, TMP10N65, TMP10N65A, TMP10N80, TMP11N50, TMP11N50SG

Keywords - TMD8N50Z MOSFET specs

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