TMD8N60AZ MOSFET Datasheet: N-Ch, 600V, 7.5A. Full specification with pinout and replacement list

TMD8N60AZ Specs and Replacement

Type Designator: TMD8N60AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: DPAK

TMD8N60AZ substitution

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TMD8N60AZ datasheet

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TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A ... See More ⇒

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TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-... See More ⇒

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TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA... See More ⇒

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