TMD8N60AZ Datasheet and Replacement
Type Designator: TMD8N60AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: DPAK
TMD8N60AZ substitution
TMD8N60AZ Datasheet (PDF)
tmd8n60az tmu8n60az.pdf
TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A
tma8n60h tmd8n60h tmu8n60h.pdf
TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-
tma8n65h tmc8n65h tmd8n65h tmu8n65h.pdf
TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA
tmd8n25z tmu8n25z.pdf
TMD8N25Z(G)/TMU8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A
Datasheet: TMD7N60Z , TMD7N65AZ , TMD7N65Z , TMD830 , TMD830AZ , TMD830Z , TMD8N25Z , TMD8N50Z , K4145 , TMP10N60 , TMP10N60A , TMP10N65 , TMP10N65A , TMP10N80 , TMP11N50 , TMP11N50SG , TMP12N60 .
History: STD13NM60ND
Keywords - TMD8N60AZ MOSFET datasheet
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History: STD13NM60ND
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