All MOSFET. TMD8N60AZ Datasheet

 

TMD8N60AZ Datasheet and Replacement


   Type Designator: TMD8N60AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: DPAK
 

 TMD8N60AZ substitution

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TMD8N60AZ Datasheet (PDF)

 ..1. Size:472K  trinnotech
 tmd8n60az tmu8n60az.pdf pdf_icon

TMD8N60AZ

TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 7.1. Size:470K  cn wuxi unigroup
 tma8n60h tmd8n60h tmu8n60h.pdf pdf_icon

TMD8N60AZ

TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-

 8.1. Size:538K  cn wuxi unigroup
 tma8n65h tmc8n65h tmd8n65h tmu8n65h.pdf pdf_icon

TMD8N60AZ

TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA

 9.1. Size:450K  trinnotech
 tmd8n25z tmu8n25z.pdf pdf_icon

TMD8N60AZ

TMD8N25Z(G)/TMU8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A

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History: MDD2N60RH

Keywords - TMD8N60AZ MOSFET datasheet

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