All MOSFET. TMP10N65A Datasheet

 

TMP10N65A Datasheet and Replacement


   Type Designator: TMP10N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
   Package: TO-220
 

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TMP10N65A Datasheet (PDF)

 ..1. Size:607K  trinnotech
 tmp10n65a tmpf10n65a.pdf pdf_icon

TMP10N65A

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

 6.1. Size:577K  trinnotech
 tmp10n65 tmpf10n65.pdf pdf_icon

TMP10N65A

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

 6.2. Size:340K  cn wuxi unigroup
 tma10n65h tmp10n65h.pdf pdf_icon

TMP10N65A

TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1

 7.1. Size:609K  trinnotech
 tmp10n60a tmpf10n60a.pdf pdf_icon

TMP10N65A

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A

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Keywords - TMP10N65A MOSFET datasheet

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