TMP2N60AZ Datasheet and Replacement
Type Designator: TMP2N60AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 41 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
TMP2N60AZ Datasheet (PDF)
tmp2n60az tmpf2n60az.pdf

TMP2N60AZ(G)/TMPF2N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
tmp2n60z tmpf2n60z.pdf

TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A
tmp2n65az tmpf2n65az.pdf

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFI7536G | WMM11N80M3 | FDMS9620S
Keywords - TMP2N60AZ MOSFET datasheet
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History: IRFI7536G | WMM11N80M3 | FDMS9620S



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