TMP3N80 Datasheet. Specs and Replacement
Type Designator: TMP3N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO-220
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TMP3N80 substitution
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TMP3N80 datasheet
tmp3n80 tmpf3n80.pdf
TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N80 / TMPF3N80 TO-220 / TO-220F TMP3N80 / TMPF3N80 RoHS TMP3N80G / TMPF3N... See More ⇒
tmp3n50z tmpf3n50z.pdf
TMP3N50Z(G)/TMPF3N50Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒
tmp3n50az tmpf3n50az.pdf
TMP3N50AZ(G)/TMPF3N50AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒
tmp3n90 tmpf3n90.pdf
TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G VDSS = 990 V @Tjmax Features ID = 2.5A Low gate charge RDS(ON) = 5.1 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N90 / TMPF3N90 TO-220 / TO-220F TMP3N90 / TMPF3N90 RoHS TMP3N90G / TMPF... See More ⇒
Detailed specifications: TMP18N20Z, TMP20N50, TMP20N50A, TMP2N60AZ, TMP2N60Z, TMP2N65AZ, TMP3N50AZ, TMP3N50Z, STP80NF70, TMP3N90, TMP4N60, TMP4N60AZ, TMP4N65, TMP4N65AZ, TMP4N65Z, TMP4N80, TMP4N90
Keywords - TMP3N80 MOSFET specs
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