All MOSFET. TMP4N65AZ Datasheet

 

TMP4N65AZ Datasheet and Replacement


   Type Designator: TMP4N65AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220
 
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TMP4N65AZ Datasheet (PDF)

 ..1. Size:608K  trinnotech
 tmp4n65az tmpf4n65az.pdf pdf_icon

TMP4N65AZ

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 7.1. Size:624K  trinnotech
 tmp4n65 tmpf4n65.pdf pdf_icon

TMP4N65AZ

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 7.2. Size:628K  trinnotech
 tmp4n65z tmpf4n65z.pdf pdf_icon

TMP4N65AZ

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 8.1. Size:571K  trinnotech
 tmp4n60 tmpf4n60.pdf pdf_icon

TMP4N65AZ

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

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Keywords - TMP4N65AZ MOSFET datasheet

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