TMP4N65Z MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

TMP4N65Z Specs and Replacement

Type Designator: TMP4N65Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-220

TMP4N65Z substitution

- MOSFET ⓘ Cross-Reference Search

TMP4N65Z datasheet

..1. Size:628K trinnotech
tmp4n65z tmpf4n65z.pdf pdf_icon

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒

7.1. Size:608K trinnotech
tmp4n65az tmpf4n65az.pdf pdf_icon

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒

7.2. Size:624K trinnotech
tmp4n65 tmpf4n65.pdf pdf_icon

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒

8.1. Size:571K trinnotech
tmp4n60 tmpf4n60.pdf pdf_icon

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4... See More ⇒