TMP4N90 Datasheet and Replacement
Type Designator: TMP4N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 123 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-220
TMP4N90 substitution
TMP4N90 Datasheet (PDF)
tmp4n90 tmpf4n90.pdf

TMP4N90/TMPF4N90TMP4N90G/TMPF4N90GVDSS = 990 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 4.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkTMP4N90 / TMPF4N90 TO-220 / TO-220F TMP4N90 / TMPF4N90 RoHSTMP4N90G / TMPF4N90G TO-220 / T
tmp4n60 tmpf4n60.pdf

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4
tmp4n65az tmpf4n65az.pdf

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
tmp4n60az tmpf4n60az.pdf

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A
Datasheet: TMP3N80 , TMP3N90 , TMP4N60 , TMP4N60AZ , TMP4N65 , TMP4N65AZ , TMP4N65Z , TMP4N80 , 13N50 , TMP5N50 , TMP5N50SG , TMP5N60AZ , TMP5N60Z , TMP630Z , TMP6N65 , TMP6N70 , TMP7N60Z .
Keywords - TMP4N90 MOSFET datasheet
TMP4N90 cross reference
TMP4N90 equivalent finder
TMP4N90 lookup
TMP4N90 substitution
TMP4N90 replacement
History: H5N60D | FMV05N60E



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