All MOSFET. TMP6N70 Datasheet

 

TMP6N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: TMP6N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 91 pF

Maximum Drain-Source On-State Resistance (Rds): 1.65 Ohm

Package: TO-220

TMP6N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMP6N70 Datasheet (PDF)

1.1. tmp6n70 tmpf6n70.pdf Size:1021K _update

TMP6N70
TMP6N70

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 700V 5.0A <1.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP6N70 / TMPF6N70 TO-220 / TO-220F TMP6N70 / TMPF6N70 RoHS TMP6N70G / TMPF6N70G TO-220 / TO-220F TMP6N70G / TMPF6

5.1. tmp6n65 tmpf6n65.pdf Size:577K _update

TMP6N70
TMP6N70

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A  Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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