TMP6N70 Datasheet and Replacement
Type Designator: TMP6N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 91 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
Package: TO-220
TMP6N70 substitution
TMP6N70 Datasheet (PDF)
tmp6n70 tmpf6n70.pdf

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A
tmp6n65 tmpf6n65.pdf

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF
tma6n90h tmp6n90h.pdf

TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90
Datasheet: TMP4N80 , TMP4N90 , TMP5N50 , TMP5N50SG , TMP5N60AZ , TMP5N60Z , TMP630Z , TMP6N65 , IRFB31N20D , TMP7N60Z , TMP7N65AZ , TMP7N65Z , TMP7N90 , TMP830 , TMP830AZ , TMP830Z , TMP8N25Z .
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