TMP7N65AZ Datasheet and Replacement
Type Designator: TMP7N65AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 103 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220
- MOSFET Cross-Reference Search
TMP7N65AZ Datasheet (PDF)
tmp7n65az tmpf7n65az.pdf

TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
tmp7n65z tmpf7n65z.pdf

TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM
tmp7n60z tmpf7n60z.pdf

TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A
Datasheet: TMP5N50 , TMP5N50SG , TMP5N60AZ , TMP5N60Z , TMP630Z , TMP6N65 , TMP6N70 , TMP7N60Z , MMIS60R580P , TMP7N65Z , TMP7N90 , TMP830 , TMP830AZ , TMP830Z , TMP8N25Z , TMP8N50Z , TMP8N60AZ .
Keywords - TMP7N65AZ MOSFET datasheet
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