TMP7N65AZ Specs and Replacement
Type Designator: TMP7N65AZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 103 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220
TMP7N65AZ substitution
- MOSFET ⓘ Cross-Reference Search
TMP7N65AZ datasheet
tmp7n65az tmpf7n65az.pdf
TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒
tmp7n65z tmpf7n65z.pdf
TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A ... See More ⇒
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES l Fast switching l 100% avalanche tested l Improved dv/dt capability APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA7N65H TO-220F A7N65H TM... See More ⇒
tmp7n60z tmpf7n60z.pdf
TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A ... See More ⇒
Detailed specifications: TMP5N50, TMP5N50SG, TMP5N60AZ, TMP5N60Z, TMP630Z, TMP6N65, TMP6N70, TMP7N60Z, IRFZ24N, TMP7N65Z, TMP7N90, TMP830, TMP830AZ, TMP830Z, TMP8N25Z, TMP8N50Z, TMP8N60AZ
Keywords - TMP7N65AZ MOSFET specs
TMP7N65AZ cross reference
TMP7N65AZ equivalent finder
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TMP7N65AZ replacement
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