TMP7N65Z Datasheet and Replacement
Type Designator: TMP7N65Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220
TMP7N65Z substitution
TMP7N65Z Datasheet (PDF)
tmp7n65z tmpf7n65z.pdf
TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A
tmp7n65az tmpf7n65az.pdf
TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM
tmp7n60z tmpf7n60z.pdf
TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A
Datasheet: TMP5N50SG , TMP5N60AZ , TMP5N60Z , TMP630Z , TMP6N65 , TMP6N70 , TMP7N60Z , TMP7N65AZ , 2N60 , TMP7N90 , TMP830 , TMP830AZ , TMP830Z , TMP8N25Z , TMP8N50Z , TMP8N60AZ , TMP8N80 .
History: 2SK3111-S | 2SK3111 | B1M160120HC | SVSP60R090FJDHD4 | IRFS624B | FC591601 | ZXM66P03N8
Keywords - TMP7N65Z MOSFET datasheet
TMP7N65Z cross reference
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TMP7N65Z replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK3111-S | 2SK3111 | B1M160120HC | SVSP60R090FJDHD4 | IRFS624B | FC591601 | ZXM66P03N8
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