TMP830 Specs and Replacement
Type Designator: TMP830
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220
TMP830 substitution
- MOSFET ⓘ Cross-Reference Search
TMP830 datasheet
tmp830 tmpf830.pdf
TMP830/TMPF830 VDSS = 550 V @Tjmax Features ID = 4.5A Low gate charge RDS(on) = 1.5 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMP830 / TMPF830 TO-220 / TO-220F TMP830 / TMPF830 RoHS Absolute Maximum Ratings Parameter Symbol TMP830 TMPF830 Unit Dra... See More ⇒
tmp830az tmpf830az.pdf
TMP830AZ(G)/TMPF830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒
tmp830z tmpf830z.pdf
TMP830Z(G)/TMPF830Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 4.5A ... See More ⇒
Detailed specifications: TMP5N60Z, TMP630Z, TMP6N65, TMP6N70, TMP7N60Z, TMP7N65AZ, TMP7N65Z, TMP7N90, P60NF06, TMP830AZ, TMP830Z, TMP8N25Z, TMP8N50Z, TMP8N60AZ, TMP8N80, TMP9N50, TMP9N50S
Keywords - TMP830 MOSFET specs
TMP830 cross reference
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TMP830 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: TPNTK3134NT1G
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