TMP830AZ PDF and Equivalents Search

 

TMP830AZ Specs and Replacement

Type Designator: TMP830AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220

TMP830AZ substitution

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TMP830AZ datasheet

 ..1. Size:606K  trinnotech
 tmp830az tmpf830az.pdf pdf_icon

TMP830AZ

TMP830AZ(G)/TMPF830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

 8.1. Size:602K  trinnotech
 tmp830 tmpf830.pdf pdf_icon

TMP830AZ

TMP830/TMPF830 VDSS = 550 V @Tjmax Features ID = 4.5A Low gate charge RDS(on) = 1.5 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMP830 / TMPF830 TO-220 / TO-220F TMP830 / TMPF830 RoHS Absolute Maximum Ratings Parameter Symbol TMP830 TMPF830 Unit Dra... See More ⇒

 8.2. Size:619K  trinnotech
 tmp830z tmpf830z.pdf pdf_icon

TMP830AZ

TMP830Z(G)/TMPF830Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 4.5A ... See More ⇒

Detailed specifications: TMP630Z, TMP6N65, TMP6N70, TMP7N60Z, TMP7N65AZ, TMP7N65Z, TMP7N90, TMP830, 75N75, TMP830Z, TMP8N25Z, TMP8N50Z, TMP8N60AZ, TMP8N80, TMP9N50, TMP9N50S, TMP9N60

Keywords - TMP830AZ MOSFET specs

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