All MOSFET. TMP830AZ Datasheet

 

TMP830AZ Datasheet and Replacement


   Type Designator: TMP830AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220
 

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TMP830AZ Datasheet (PDF)

 ..1. Size:606K  trinnotech
 tmp830az tmpf830az.pdf pdf_icon

TMP830AZ

TMP830AZ(G)/TMPF830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 8.1. Size:602K  trinnotech
 tmp830 tmpf830.pdf pdf_icon

TMP830AZ

TMP830/TMPF830 VDSS = 550 V @Tjmax Features ID = 4.5A Low gate charge RDS(on) = 1.5 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMP830 / TMPF830 TO-220 / TO-220F TMP830 / TMPF830 RoHS Absolute Maximum Ratings Parameter Symbol TMP830 TMPF830 Unit Dra

 8.2. Size:619K  trinnotech
 tmp830z tmpf830z.pdf pdf_icon

TMP830AZ

TMP830Z(G)/TMPF830Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 4.5A

Datasheet: TMP630Z , TMP6N65 , TMP6N70 , TMP7N60Z , TMP7N65AZ , TMP7N65Z , TMP7N90 , TMP830 , IRF520 , TMP830Z , TMP8N25Z , TMP8N50Z , TMP8N60AZ , TMP8N80 , TMP9N50 , TMP9N50S , TMP9N60 .

History: 40673 | TMP8N50Z

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