All MOSFET. TMP8N50Z Datasheet

 

TMP8N50Z Datasheet and Replacement


   Type Designator: TMP8N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
      - MOSFET Cross-Reference Search

 

TMP8N50Z Datasheet (PDF)

 ..1. Size:605K  trinnotech
 tmp8n50z tmpf8n50z.pdf pdf_icon

TMP8N50Z

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

 9.1. Size:625K  trinnotech
 tmp8n60az tmpf8n60az.pdf pdf_icon

TMP8N50Z

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 9.2. Size:603K  trinnotech
 tmp8n25z tmpf8n25z.pdf pdf_icon

TMP8N50Z

TMP8N25Z(G)/TMPF8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A

 9.3. Size:1284K  trinnotech
 tmp8n80 tmpf8n80.pdf pdf_icon

TMP8N50Z

TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - TMP8N50Z MOSFET datasheet

 TMP8N50Z cross reference
 TMP8N50Z equivalent finder
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