All MOSFET. TMP8N60AZ Datasheet

 

TMP8N60AZ Datasheet and Replacement


   Type Designator: TMP8N60AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

 TMP8N60AZ substitution

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TMP8N60AZ Datasheet (PDF)

 ..1. Size:625K  trinnotech
 tmp8n60az tmpf8n60az.pdf pdf_icon

TMP8N60AZ

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 9.1. Size:605K  trinnotech
 tmp8n50z tmpf8n50z.pdf pdf_icon

TMP8N60AZ

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

 9.2. Size:603K  trinnotech
 tmp8n25z tmpf8n25z.pdf pdf_icon

TMP8N60AZ

TMP8N25Z(G)/TMPF8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A

 9.3. Size:1284K  trinnotech
 tmp8n80 tmpf8n80.pdf pdf_icon

TMP8N60AZ

TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A

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Datasheet: TMP7N65AZ , TMP7N65Z , TMP7N90 , TMP830 , TMP830AZ , TMP830Z , TMP8N25Z , TMP8N50Z , NCEP15T14 , TMP8N80 , TMP9N50 , TMP9N50S , TMP9N60 , TMP9N70 , TMP9N90 , TMPF10N60 , TMPF10N60A .

Keywords - TMP8N60AZ MOSFET datasheet

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