TMP8N60AZ PDF and Equivalents Search

 

TMP8N60AZ Specs and Replacement

Type Designator: TMP8N60AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

TMP8N60AZ substitution

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TMP8N60AZ datasheet

 ..1. Size:625K  trinnotech
 tmp8n60az tmpf8n60az.pdf pdf_icon

TMP8N60AZ

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A ... See More ⇒

 9.1. Size:605K  trinnotech
 tmp8n50z tmpf8n50z.pdf pdf_icon

TMP8N60AZ

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒

 9.2. Size:603K  trinnotech
 tmp8n25z tmpf8n25z.pdf pdf_icon

TMP8N60AZ

TMP8N25Z(G)/TMPF8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A ... See More ⇒

 9.3. Size:1284K  trinnotech
 tmp8n80 tmpf8n80.pdf pdf_icon

TMP8N60AZ

TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A ... See More ⇒

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Detailed specifications: TMP7N65AZ, TMP7N65Z, TMP7N90, TMP830, TMP830AZ, TMP830Z, TMP8N25Z, TMP8N50Z, IRF1405, TMP8N80, TMP9N50, TMP9N50S, TMP9N60, TMP9N70, TMP9N90, TMPF10N60, TMPF10N60A

Keywords - TMP8N60AZ MOSFET specs

 TMP8N60AZ cross reference

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 TMP8N60AZ replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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