TMP8N80 Datasheet and Replacement
Type Designator: TMP8N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 146 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220
TMP8N80 substitution
TMP8N80 Datasheet (PDF)
tmp8n80 tmpf8n80.pdf
TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A
tmp8n60az tmpf8n60az.pdf
TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A
tmp8n50z tmpf8n50z.pdf
TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A
tmp8n25z tmpf8n25z.pdf
TMP8N25Z(G)/TMPF8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A
Datasheet: TMP7N65Z , TMP7N90 , TMP830 , TMP830AZ , TMP830Z , TMP8N25Z , TMP8N50Z , TMP8N60AZ , MMIS60R580P , TMP9N50 , TMP9N50S , TMP9N60 , TMP9N70 , TMP9N90 , TMPF10N60 , TMPF10N60A , TMPF10N65 .
History: EMB22A04G
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