All MOSFET. TMP8N80 Datasheet

 

TMP8N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: TMP8N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 46 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 146 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-220

TMP8N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMP8N80 Datasheet (PDF)

1.1. tmp8n80 tmpf8n80.pdf Size:1284K _update

TMP8N80
TMP8N80

TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 800V 8A < 1.4W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP8N80 / TMPF8N80 TO-220 / TO-220F TMP8N80 / TMPF8N80 RoHS TMP8N80G / TMPF8N80G TO-220 / TO-220F TMP8N80G / TMPF8N8

5.1. tmp8n25z tmpf8n25z.pdf Size:603K _update

TMP8N80
TMP8N80

TMP8N25Z(G)/TMPF8N25Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)MAX  100% avalanche tested 250V 8A <0.6W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP8N25Z / TMPF8N25Z TO-220 / TO-220F TMP8N25Z / TMPF8N25Z RoHS TMP8N25ZG / TMPF8N25ZG TO-220 / TO-220F TMP8N25ZG

5.2. tmp8n50z tmpf8n50z.pdf Size:605K _update

TMP8N80
TMP8N80

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 8A <0.85W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP8N50Z/TMPF8N50Z TO-220 / TO-220F TMP8N50Z/TMPF8N50Z RoHS TMP8N50ZG/TMPF8N50ZG TO-220 / TO-220F TMP8N50ZG/TMPF8N

 5.3. tmp8n60az tmpf8n60az.pdf Size:625K _update

TMP8N80
TMP8N80

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 7.5A <1.2W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMP8N60AZ / TMPF8N60AZ TO-220 / TO-220F TMP8N60AZ / TMPF8N60AZ RoHS TMP8N60AZG /

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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