All MOSFET. TMP9N50S Datasheet

 

TMP9N50S Datasheet and Replacement


   Type Designator: TMP9N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
 

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TMP9N50S Datasheet (PDF)

 ..1. Size:619K  trinnotech
tmp9n50s tmpf9n50s.pdf pdf_icon

TMP9N50S

TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A

 7.1. Size:333K  trinnotech
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TMP9N50S

TMP9N50/TMPF9N50TMP9N50G/TMPF9N50GVDSS = 550 V @TjmaxFeaturesID = 9A Low gate chargeRDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHSTMP9N50G / TMPF9N50G TO-220 / T

 9.1. Size:403K  trinnotech
tmp9n90 tmpf9n90.pdf pdf_icon

TMP9N50S

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N

 9.2. Size:609K  trinnotech
tmp9n70 tmpf9n70.pdf pdf_icon

TMP9N50S

TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 9A

Datasheet: TMP830 , TMP830AZ , TMP830Z , TMP8N25Z , TMP8N50Z , TMP8N60AZ , TMP8N80 , TMP9N50 , STP65NF06 , TMP9N60 , TMP9N70 , TMP9N90 , TMPF10N60 , TMPF10N60A , TMPF10N65 , TMPF10N65A , TMPF10N80 .

Keywords - TMP9N50S MOSFET datasheet

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