TMPF10N65 MOSFET Datasheet: N-Ch, 650V, 9.5A. Full specification with pinout and replacement list

TMPF10N65 Specs and Replacement

Type Designator: TMPF10N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 203 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm

Package: TO-220F

TMPF10N65 substitution

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TMPF10N65 datasheet

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TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N... See More ⇒

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TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A ... See More ⇒

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TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A ... See More ⇒

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TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHS TMP10N60G / TMPF10N60G... See More ⇒

Detailed specifications: TMP8N80, TMP9N50, TMP9N50S, TMP9N60, TMP9N70, TMP9N90, TMPF10N60, TMPF10N60A, K2611, TMPF10N65A, TMPF10N80, TMPF11N50, TMPF11N50SG, TMPF12N60, TMPF12N60A, TMPF13N50, TMPF13N50A