All MOSFET. TMPF20N50 Datasheet

 

TMPF20N50 Datasheet and Replacement


   Type Designator: TMPF20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 54 nC
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220F
 

 TMPF20N50 substitution

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TMPF20N50 Datasheet (PDF)

 ..1. Size:409K  trinnotech
 tmp20n50 tmpf20n50.pdf pdf_icon

TMPF20N50

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50

 0.1. Size:621K  trinnotech
 tmp20n50a tmpf20n50a.pdf pdf_icon

TMPF20N50

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A

 9.1. Size:604K  trinnotech
 tmp2n65az tmpf2n65az.pdf pdf_icon

TMPF20N50

TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 9.2. Size:627K  trinnotech
 tmp2n60z tmpf2n60z.pdf pdf_icon

TMPF20N50

TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

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Keywords - TMPF20N50 MOSFET datasheet

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