TMPF20N50 Datasheet. Specs and Replacement
Type Designator: TMPF20N50 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 296 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220F
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TMPF20N50 substitution
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TMPF20N50 datasheet
tmp20n50 tmpf20n50.pdf
TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50... See More ⇒
tmp20n50a tmpf20n50a.pdf
TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A ... See More ⇒
tmp2n65az tmpf2n65az.pdf
TMP2N65AZ(G)/TMPF2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒
tmp2n60z tmpf2n60z.pdf
TMP2N60Z(G)/TMPF2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒
Detailed specifications: TMPF12N60A, TMPF13N50, TMPF13N50A, TMPF15N50, TMPF16N25Z, TMPF16N60, TMPF16N60A, TMPF18N20Z, 20N60, TMPF20N50A, TMPF2N60AZ, TMPF2N60Z, TMPF2N65AZ, TMPF3N50AZ, TMPF3N50Z, TMPF3N80, TMPF3N90
Keywords - TMPF20N50 MOSFET specs
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