TMPF3N90 Datasheet and Replacement
Type Designator: TMPF3N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm
Package: TO-220F
TMPF3N90 substitution
TMPF3N90 Datasheet (PDF)
tmp3n90 tmpf3n90.pdf

TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G VDSS = 990 V @Tjmax Features ID = 2.5A Low gate charge RDS(ON) = 5.1 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N90 / TMPF3N90 TO-220 / TO-220F TMP3N90 / TMPF3N90 RoHS TMP3N90G / TMPF
tmp3n50z tmpf3n50z.pdf

TMP3N50Z(G)/TMPF3N50Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
tmp3n50az tmpf3n50az.pdf

TMP3N50AZ(G)/TMPF3N50AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
tmp3n80 tmpf3n80.pdf

TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N80 / TMPF3N80 TO-220 / TO-220F TMP3N80 / TMPF3N80 RoHS TMP3N80G / TMPF3N
Datasheet: TMPF20N50 , TMPF20N50A , TMPF2N60AZ , TMPF2N60Z , TMPF2N65AZ , TMPF3N50AZ , TMPF3N50Z , TMPF3N80 , IRFB4110 , TMPF4N60 , TMPF4N60AZ , TMPF4N65 , TMPF4N65AZ , TMPF4N65Z , TMPF4N80 , TMPF4N90 , TMPF5N50 .
Keywords - TMPF3N90 MOSFET datasheet
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