All MOSFET. TMPF3N90 Datasheet

 

TMPF3N90 Datasheet and Replacement


   Type Designator: TMPF3N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.1 Ohm
   Package: TO-220F
 

 TMPF3N90 substitution

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TMPF3N90 Datasheet (PDF)

 ..1. Size:623K  trinnotech
 tmp3n90 tmpf3n90.pdf pdf_icon

TMPF3N90

TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G VDSS = 990 V @Tjmax Features ID = 2.5A Low gate charge RDS(ON) = 5.1 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N90 / TMPF3N90 TO-220 / TO-220F TMP3N90 / TMPF3N90 RoHS TMP3N90G / TMPF

 8.1. Size:619K  trinnotech
 tmp3n50z tmpf3n50z.pdf pdf_icon

TMPF3N90

TMP3N50Z(G)/TMPF3N50Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 8.2. Size:608K  trinnotech
 tmp3n50az tmpf3n50az.pdf pdf_icon

TMPF3N90

TMP3N50AZ(G)/TMPF3N50AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 8.3. Size:596K  trinnotech
 tmp3n80 tmpf3n80.pdf pdf_icon

TMPF3N90

TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N80 / TMPF3N80 TO-220 / TO-220F TMP3N80 / TMPF3N80 RoHS TMP3N80G / TMPF3N

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History: IXFX120N20

Keywords - TMPF3N90 MOSFET datasheet

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