TMPF4N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: TMPF4N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 53
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.55
Ohm
Package:
TO-220F
TMPF4N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMPF4N60
Datasheet (PDF)
..1. Size:571K trinnotech
tmp4n60 tmpf4n60.pdf 
TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4
0.1. Size:618K trinnotech
tmp4n60az tmpf4n60az.pdf
TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A
7.1. Size:608K trinnotech
tmp4n65az tmpf4n65az.pdf
TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
7.2. Size:624K trinnotech
tmp4n65 tmpf4n65.pdf
TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
7.3. Size:628K trinnotech
tmp4n65z tmpf4n65z.pdf
TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
Datasheet: FQT7N10L
, FDP083N15A
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.
