TMPF4N60 Datasheet. Specs and Replacement

Type Designator: TMPF4N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.55 Ohm

Package: TO-220F

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TMPF4N60 substitution

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TMPF4N60 datasheet

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TMPF4N60

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4... See More ⇒

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TMPF4N60

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A ... See More ⇒

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TMPF4N60

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒

 7.2. Size:624K  trinnotech
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TMPF4N60

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒

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Detailed specifications: TMPF20N50A, TMPF2N60AZ, TMPF2N60Z, TMPF2N65AZ, TMPF3N50AZ, TMPF3N50Z, TMPF3N80, TMPF3N90, IRFB4110, TMPF4N60AZ, TMPF4N65, TMPF4N65AZ, TMPF4N65Z, TMPF4N80, TMPF4N90, TMPF5N50, TMPF5N50SG

Keywords - TMPF4N60 MOSFET specs

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