TMPF4N60AZ MOSFET. Datasheet pdf. Equivalent

   Type Designator: TMPF4N60AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220F

TMPF4N60AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMPF4N60AZ Datasheet (PDF)

..1. Size:618K trinnotech
tmp4n60az tmpf4n60az.pdf

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

6.1. Size:571K trinnotech
tmp4n60 tmpf4n60.pdf

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

7.1. Size:608K trinnotech
tmp4n65az tmpf4n65az.pdf