TMPF4N60AZ Datasheet. Specs and Replacement
Type Designator: TMPF4N60AZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 61 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
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TMPF4N60AZ substitution
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TMPF4N60AZ datasheet
tmp4n60az tmpf4n60az.pdf
TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A ... See More ⇒
tmp4n60 tmpf4n60.pdf
TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4... See More ⇒
tmp4n65az tmpf4n65az.pdf
TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒
tmp4n65 tmpf4n65.pdf
TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒
Detailed specifications: TMPF2N60AZ, TMPF2N60Z, TMPF2N65AZ, TMPF3N50AZ, TMPF3N50Z, TMPF3N80, TMPF3N90, TMPF4N60, IRF640N, TMPF4N65, TMPF4N65AZ, TMPF4N65Z, TMPF4N80, TMPF4N90, TMPF5N50, TMPF5N50SG, TMPF5N60AZ
Keywords - TMPF4N60AZ MOSFET specs
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