All MOSFET. TMPF4N65Z Datasheet

 

TMPF4N65Z Datasheet and Replacement


   Type Designator: TMPF4N65Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

TMPF4N65Z Datasheet (PDF)

 ..1. Size:628K  trinnotech
 tmp4n65z tmpf4n65z.pdf pdf_icon

TMPF4N65Z

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 6.1. Size:608K  trinnotech
 tmp4n65az tmpf4n65az.pdf pdf_icon

TMPF4N65Z

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 6.2. Size:624K  trinnotech
 tmp4n65 tmpf4n65.pdf pdf_icon

TMPF4N65Z

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

 7.1. Size:571K  trinnotech
 tmp4n60 tmpf4n60.pdf pdf_icon

TMPF4N65Z

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

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Keywords - TMPF4N65Z MOSFET datasheet

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