TMPF5N50SG Datasheet and Replacement
Type Designator: TMPF5N50SG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.85 Ohm
Package: TO-220F
TMPF5N50SG substitution
TMPF5N50SG Datasheet (PDF)
tmp5n50sg tmpf5n50sg.pdf

TMP5N50SG/TMPF5N50SGVDSS = 550 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen FreeAbs
tmp5n50 tmpf5n50.pdf

TMP5N50/TMPF5N50TMP5N50G/TMPF5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHST
tmp5n60az tmpf5n60az.pdf

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
tmp5n60z tmpf5n60z.pdf

TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 4.2A
Datasheet: TMPF4N60 , TMPF4N60AZ , TMPF4N65 , TMPF4N65AZ , TMPF4N65Z , TMPF4N80 , TMPF4N90 , TMPF5N50 , IRFP250N , TMPF5N60AZ , TMPF5N60Z , TMPF630Z , TMPF6N65 , TMPF6N70 , TMPF7N60Z , TMPF7N65AZ , TMPF7N65Z .
History: FXN25N50F
Keywords - TMPF5N50SG MOSFET datasheet
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History: FXN25N50F



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