All MOSFET. TMPF5N50SG Datasheet

 

TMPF5N50SG Datasheet and Replacement


   Type Designator: TMPF5N50SG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.85 Ohm
   Package: TO-220F
 

 TMPF5N50SG substitution

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TMPF5N50SG Datasheet (PDF)

 ..1. Size:354K  trinnotech
 tmp5n50sg tmpf5n50sg.pdf pdf_icon

TMPF5N50SG

TMP5N50SG/TMPF5N50SGVDSS = 550 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen FreeAbs

 6.1. Size:347K  trinnotech
 tmp5n50 tmpf5n50.pdf pdf_icon

TMPF5N50SG

TMP5N50/TMPF5N50TMP5N50G/TMPF5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHST

 8.1. Size:610K  trinnotech
 tmp5n60az tmpf5n60az.pdf pdf_icon

TMPF5N50SG

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

 8.2. Size:615K  trinnotech
 tmp5n60z tmpf5n60z.pdf pdf_icon

TMPF5N50SG

TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 4.2A

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History: 2SK3625

Keywords - TMPF5N50SG MOSFET datasheet

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