TMPF5N60AZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: TMPF5N60AZ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1
Ohm
Package:
TO-220F
TMPF5N60AZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMPF5N60AZ
Datasheet (PDF)
..1. Size:610K trinnotech
tmp5n60az tmpf5n60az.pdf 
TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
6.1. Size:615K trinnotech
tmp5n60z tmpf5n60z.pdf
TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 4.2A
8.1. Size:354K trinnotech
tmp5n50sg tmpf5n50sg.pdf
TMP5N50SG/TMPF5N50SGVDSS = 550 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen FreeAbs
8.2. Size:347K trinnotech
tmp5n50 tmpf5n50.pdf
TMP5N50/TMPF5N50TMP5N50G/TMPF5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHST
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