TMPF830 Datasheet. Specs and Replacement
Type Designator: TMPF830 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220F
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TMPF830 substitution
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TMPF830 datasheet
tmp830 tmpf830.pdf
TMP830/TMPF830 VDSS = 550 V @Tjmax Features ID = 4.5A Low gate charge RDS(on) = 1.5 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMP830 / TMPF830 TO-220 / TO-220F TMP830 / TMPF830 RoHS Absolute Maximum Ratings Parameter Symbol TMP830 TMPF830 Unit Dra... See More ⇒
tmp830az tmpf830az.pdf
TMP830AZ(G)/TMPF830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒
tmp830z tmpf830z.pdf
TMP830Z(G)/TMPF830Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 4.5A ... See More ⇒
tmp8n60az tmpf8n60az.pdf
TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A ... See More ⇒
Detailed specifications: TMPF5N60Z, TMPF630Z, TMPF6N65, TMPF6N70, TMPF7N60Z, TMPF7N65AZ, TMPF7N65Z, TMPF7N90, STP75NF75, TMPF830AZ, TMPF830Z, TMPF8N25Z, TMPF8N50Z, TMPF8N60AZ, TMPF8N80, TMPF9N50, TMPF9N50S
Keywords - TMPF830 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
