TMPF830AZ MOSFET. Datasheet pdf. Equivalent

   Type Designator: TMPF830AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220F

TMPF830AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMPF830AZ Datasheet (PDF)

..1. Size:606K trinnotech
tmp830az tmpf830az.pdf

TMP830AZ(G)/TMPF830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

7.1. Size:602K trinnotech
tmp830 tmpf830.pdf

TMP830/TMPF830 VDSS = 550 V @Tjmax Features ID = 4.5A Low gate charge RDS(on) = 1.5 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMP830 / TMPF830 TO-220 / TO-220F TMP830 / TMPF830 RoHS Absolute Maximum Ratings Parameter Symbol TMP830 TMPF830 Unit Dra

7.2. Size:619K trinnotech
tmp830z tmpf830z.pdf