All MOSFET. TMPF830Z Datasheet

 

TMPF830Z Datasheet and Replacement


   Type Designator: TMPF830Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220F
 

 TMPF830Z substitution

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TMPF830Z Datasheet (PDF)

 ..1. Size:619K  trinnotech
 tmp830z tmpf830z.pdf pdf_icon

TMPF830Z

TMP830Z(G)/TMPF830Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 4.5A

 7.1. Size:606K  trinnotech
 tmp830az tmpf830az.pdf pdf_icon

TMPF830Z

TMP830AZ(G)/TMPF830AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 7.2. Size:602K  trinnotech
 tmp830 tmpf830.pdf pdf_icon

TMPF830Z

TMP830/TMPF830 VDSS = 550 V @Tjmax Features ID = 4.5A Low gate charge RDS(on) = 1.5 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMP830 / TMPF830 TO-220 / TO-220F TMP830 / TMPF830 RoHS Absolute Maximum Ratings Parameter Symbol TMP830 TMPF830 Unit Dra

 9.1. Size:625K  trinnotech
 tmp8n60az tmpf8n60az.pdf pdf_icon

TMPF830Z

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

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Datasheet: TMPF6N65 , TMPF6N70 , TMPF7N60Z , TMPF7N65AZ , TMPF7N65Z , TMPF7N90 , TMPF830 , TMPF830AZ , IRF1010E , TMPF8N25Z , TMPF8N50Z , TMPF8N60AZ , TMPF8N80 , TMPF9N50 , TMPF9N50S , TMPF9N60 , TMPF9N70 .

History: PMFPB8032XP | CS4N65P | 2SK3432 | AON6994 | BLF178P | SWP036R10E8S | AP6N3R5I

Keywords - TMPF830Z MOSFET datasheet

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