TMPF8N50Z Datasheet. Specs and Replacement

Type Designator: TMPF8N50Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220F

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TMPF8N50Z datasheet

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TMPF8N50Z

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒

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TMPF8N50Z

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A ... See More ⇒

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TMP8N25Z(G)/TMPF8N25Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A ... See More ⇒

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Detailed specifications: TMPF7N60Z, TMPF7N65AZ, TMPF7N65Z, TMPF7N90, TMPF830, TMPF830AZ, TMPF830Z, TMPF8N25Z, IRLB4132, TMPF8N60AZ, TMPF8N80, TMPF9N50, TMPF9N50S, TMPF9N60, TMPF9N70, TMPF9N90, TMT2N40G

Keywords - TMPF8N50Z MOSFET specs

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