All MOSFET. TMT2N40G Datasheet

 

TMT2N40G Datasheet and Replacement


   Type Designator: TMT2N40G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.9 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: SOT-223
      - MOSFET Cross-Reference Search

 

TMT2N40G Datasheet (PDF)

 ..1. Size:327K  trinnotech
 tmt2n40g.pdf pdf_icon

TMT2N40G

TMT2N40GVDSS = 440 V @TjmaxFeaturesID = 2A Low gate chargeRDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC QualificationDDSGDGSDevice Package MarkingTMT2N40G SOT223 TMT2N40GAbsolute Maximum Ra

 9.1. Size:518K  trinnotech
 tmt2n60zg.pdf pdf_icon

TMT2N40G

TMT2N60ZG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on 100% avalanche tested 600V 2A

 9.2. Size:640K  cn wuxi unigroup
 tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf pdf_icon

TMT2N40G

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - TMT2N40G MOSFET datasheet

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