TMT2N60ZG MOSFET Datasheet: N-Ch, 600V, 1.4A. Full specification with pinout and replacement list

TMT2N60ZG Specs and Replacement

Type Designator: TMT2N60ZG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 41 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SOT-223

TMT2N60ZG substitution

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TMT2N60ZG datasheet

..1. Size:518K trinnotech
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TMT2N60ZG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on 100% avalanche tested 600V 2A ... See More ⇒

7.1. Size:640K cn wuxi unigroup
tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf pdf_icon

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info... See More ⇒

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tmt2n40g.pdf pdf_icon

TMT2N40G VDSS = 440 V @Tjmax Features ID = 2A Low gate charge RDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche tested RDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC Qualification D D S G D G S Device Package Marking TMT2N40G SOT223 TMT2N40G Absolute Maximum Ra... See More ⇒

Detailed specifications: TMPF8N60AZ , TMPF8N80 , TMPF9N50 , TMPF9N50S , TMPF9N60 , TMPF9N70 , TMPF9N90 , TMT2N40G , AON7410 , TMT3N30G , TMT3N40ZG , TMU16N25Z , TMU18N20Z , TMU2N40 , TMU2N60AZ , TMU2N60Z , TMU2N65AZ .