All MOSFET. TMT2N60ZG Datasheet

 

TMT2N60ZG Datasheet and Replacement


   Type Designator: TMT2N60ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT-223
 

 TMT2N60ZG substitution

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TMT2N60ZG Datasheet (PDF)

 ..1. Size:518K  trinnotech
 tmt2n60zg.pdf pdf_icon

TMT2N60ZG

TMT2N60ZG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on 100% avalanche tested 600V 2A

 7.1. Size:640K  cn wuxi unigroup
 tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf pdf_icon

TMT2N60ZG

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info

 9.1. Size:327K  trinnotech
 tmt2n40g.pdf pdf_icon

TMT2N60ZG

TMT2N40GVDSS = 440 V @TjmaxFeaturesID = 2A Low gate chargeRDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC QualificationDDSGDGSDevice Package MarkingTMT2N40G SOT223 TMT2N40GAbsolute Maximum Ra

Datasheet: TMPF8N60AZ , TMPF8N80 , TMPF9N50 , TMPF9N50S , TMPF9N60 , TMPF9N70 , TMPF9N90 , TMT2N40G , RFP50N06 , TMT3N30G , TMT3N40ZG , TMU16N25Z , TMU18N20Z , TMU2N40 , TMU2N60AZ , TMU2N60Z , TMU2N65AZ .

History: SI2331DS | KP504A | 2SK2791 | IXTH36P15P | SI2365EDS | S40N14RP | KP743B1

Keywords - TMT2N60ZG MOSFET datasheet

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