TMT2N60ZG Datasheet. Specs and Replacement

Type Designator: TMT2N60ZG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SOT-223

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TMT2N60ZG datasheet

 ..1. Size:518K  trinnotech
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TMT2N60ZG

TMT2N60ZG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on 100% avalanche tested 600V 2A ... See More ⇒

 7.1. Size:640K  cn wuxi unigroup
 tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf pdf_icon

TMT2N60ZG

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info... See More ⇒

 9.1. Size:327K  trinnotech
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TMT2N60ZG

TMT2N40G VDSS = 440 V @Tjmax Features ID = 2A Low gate charge RDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche tested RDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC Qualification D D S G D G S Device Package Marking TMT2N40G SOT223 TMT2N40G Absolute Maximum Ra... See More ⇒

Detailed specifications: TMPF8N60AZ, TMPF8N80, TMPF9N50, TMPF9N50S, TMPF9N60, TMPF9N70, TMPF9N90, TMT2N40G, AON6380, TMT3N30G, TMT3N40ZG, TMU16N25Z, TMU18N20Z, TMU2N40, TMU2N60AZ, TMU2N60Z, TMU2N65AZ

Keywords - TMT2N60ZG MOSFET specs

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