TMU18N20Z Datasheet. Specs and Replacement
Type Designator: TMU18N20Z 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: I-PAK
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TMU18N20Z substitution
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TMU18N20Z datasheet
tmd18n20z tmu18n20z.pdf
TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A ... See More ⇒
Detailed specifications: TMPF9N60, TMPF9N70, TMPF9N90, TMT2N40G, TMT2N60ZG, TMT3N30G, TMT3N40ZG, TMU16N25Z, IRFB3607, TMU2N40, TMU2N60AZ, TMU2N60Z, TMU2N65AZ, TMU3N40ZG, TMU3N50AZ, TMU3N50Z, TMU3N80G
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
