TMU18N20Z Datasheet and Replacement
Type Designator: TMU18N20Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: I-PAK
TMU18N20Z substitution
TMU18N20Z Datasheet (PDF)
tmd18n20z tmu18n20z.pdf
TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A
Datasheet: TMPF9N60 , TMPF9N70 , TMPF9N90 , TMT2N40G , TMT2N60ZG , TMT3N30G , TMT3N40ZG , TMU16N25Z , IRF1407 , TMU2N40 , TMU2N60AZ , TMU2N60Z , TMU2N65AZ , TMU3N40ZG , TMU3N50AZ , TMU3N50Z , TMU3N80G .
History: CTLDM7120-M832DS | STD18N65M5
Keywords - TMU18N20Z MOSFET datasheet
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History: CTLDM7120-M832DS | STD18N65M5
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