All MOSFET. TMU18N20Z Datasheet

 

TMU18N20Z Datasheet and Replacement


   Type Designator: TMU18N20Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: I-PAK
 

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TMU18N20Z Datasheet (PDF)

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TMU18N20Z

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A

Datasheet: TMPF9N60 , TMPF9N70 , TMPF9N90 , TMT2N40G , TMT2N60ZG , TMT3N30G , TMT3N40ZG , TMU16N25Z , IRFB3607 , TMU2N40 , TMU2N60AZ , TMU2N60Z , TMU2N65AZ , TMU3N40ZG , TMU3N50AZ , TMU3N50Z , TMU3N80G .

Keywords - TMU18N20Z MOSFET datasheet

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