TMU2N40 Datasheet. Specs and Replacement
Type Designator: TMU2N40 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 32 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: I-PAK
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TMU2N40 substitution
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TMU2N40 datasheet
tmd2n40 tmu2n40.pdf
TMD2N40/TMU2N40 TMD2N40G/TMU2N40G VDSS = 440 V @Tjmax Features ID = 2A Low gate charge RDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche tested RDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD2N40 / ... See More ⇒
tmd2n60z tmu2n60z.pdf
TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒
tmd2n60az tmu2n60az.pdf
TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒
tmd2n65az tmu2n65az.pdf
TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒
Detailed specifications: TMPF9N70, TMPF9N90, TMT2N40G, TMT2N60ZG, TMT3N30G, TMT3N40ZG, TMU16N25Z, TMU18N20Z, AON6380, TMU2N60AZ, TMU2N60Z, TMU2N65AZ, TMU3N40ZG, TMU3N50AZ, TMU3N50Z, TMU3N80G, TMU3N90
Keywords - TMU2N40 MOSFET specs
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