All MOSFET. TMU2N40 Datasheet

 

TMU2N40 Datasheet and Replacement


   Type Designator: TMU2N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: I-PAK
 

 TMU2N40 substitution

   - MOSFET ⓘ Cross-Reference Search

 

TMU2N40 Datasheet (PDF)

 ..1. Size:338K  trinnotech
 tmd2n40 tmu2n40.pdf pdf_icon

TMU2N40

TMD2N40/TMU2N40TMD2N40G/TMU2N40GVDSS = 440 V @TjmaxFeaturesID = 2A Low gate chargeRDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD2N40 /

 9.1. Size:474K  trinnotech
 tmd2n60z tmu2n60z.pdf pdf_icon

TMU2N40

TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A

 9.2. Size:455K  trinnotech
 tmd2n60az tmu2n60az.pdf pdf_icon

TMU2N40

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 9.3. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf pdf_icon

TMU2N40

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

SHOW MORE

Datasheet: TMPF9N70 , TMPF9N90 , TMT2N40G , TMT2N60ZG , TMT3N30G , TMT3N40ZG , TMU16N25Z , TMU18N20Z , IRLZ44N , TMU2N60AZ , TMU2N60Z , TMU2N65AZ , TMU3N40ZG , TMU3N50AZ , TMU3N50Z , TMU3N80G , TMU3N90 .

History: PTA08N100 | 3SK323

Keywords - TMU2N40 MOSFET datasheet

 TMU2N40 cross reference
 TMU2N40 equivalent finder
 TMU2N40 lookup
 TMU2N40 substitution
 TMU2N40 replacement

 

 
Back to Top

 


 
.