TMU2N60AZ Datasheet and Replacement
Type Designator: TMU2N60AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 41 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: I-PAK
TMU2N60AZ substitution
TMU2N60AZ Datasheet (PDF)
tmd2n60az tmu2n60az.pdf
TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
tmd2n60z tmu2n60z.pdf
TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A
tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf
TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info
tmd2n65az tmu2n65az.pdf
TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
Datasheet: TMPF9N90 , TMT2N40G , TMT2N60ZG , TMT3N30G , TMT3N40ZG , TMU16N25Z , TMU18N20Z , TMU2N40 , AO4407 , TMU2N60Z , TMU2N65AZ , TMU3N40ZG , TMU3N50AZ , TMU3N50Z , TMU3N80G , TMU3N90 , TMU4N60 .
Keywords - TMU2N60AZ MOSFET datasheet
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History: PTA08N100 | 3SK323
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