TMU2N60AZ Datasheet. Specs and Replacement
Type Designator: TMU2N60AZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: I-PAK
📄📄 Copy
TMU2N60AZ substitution
- MOSFET ⓘ Cross-Reference Search
TMU2N60AZ datasheet
tmd2n60az tmu2n60az.pdf
TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒
tmd2n60z tmu2n60z.pdf
TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒
tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf
TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info... See More ⇒
tmd2n65az tmu2n65az.pdf
TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒
Detailed specifications: TMPF9N90, TMT2N40G, TMT2N60ZG, TMT3N30G, TMT3N40ZG, TMU16N25Z, TMU18N20Z, TMU2N40, IRF530, TMU2N60Z, TMU2N65AZ, TMU3N40ZG, TMU3N50AZ, TMU3N50Z, TMU3N80G, TMU3N90, TMU4N60
Keywords - TMU2N60AZ MOSFET specs
TMU2N60AZ cross reference
TMU2N60AZ equivalent finder
TMU2N60AZ pdf lookup
TMU2N60AZ substitution
TMU2N60AZ replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
