All MOSFET. TMU3N50Z Datasheet

 

TMU3N50Z Datasheet and Replacement


   Type Designator: TMU3N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.2 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: I-PAK
 

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TMU3N50Z Datasheet (PDF)

 ..1. Size:467K  trinnotech
 tmd3n50z tmu3n50z.pdf pdf_icon

TMU3N50Z

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 7.1. Size:454K  trinnotech
 tmd3n50az tmu3n50az.pdf pdf_icon

TMU3N50Z

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 9.1. Size:334K  trinnotech
 tmd3n80g tmu3n80g.pdf pdf_icon

TMU3N50Z

TMD3N80G/TMU3N80GFeaturesVDSS = 880 V @Tjmax Low gate chargeID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC QualificationD-PAK DI-PAKGSDevice Package Marking RemarkTMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen FreeAbsolute Maximum Ratings Parameter

 9.2. Size:829K  trinnotech
 tmd3n90 tmu3n90.pdf pdf_icon

TMU3N50Z

TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

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Datasheet: TMU16N25Z , TMU18N20Z , TMU2N40 , TMU2N60AZ , TMU2N60Z , TMU2N65AZ , TMU3N40ZG , TMU3N50AZ , IRF1407 , TMU3N80G , TMU3N90 , TMU4N60 , TMU4N60AZ , TMU4N65AZ , TMU4N65Z , TMU5N40ZG , TMU5N50 .

History: HSS0008 | VBZM40N03 | 50N06AF

Keywords - TMU3N50Z MOSFET datasheet

 TMU3N50Z cross reference
 TMU3N50Z equivalent finder
 TMU3N50Z lookup
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