TMU3N80G Datasheet and Replacement
Type Designator: TMU3N80G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: I-PAK
TMU3N80G substitution
TMU3N80G Datasheet (PDF)
tmd3n80g tmu3n80g.pdf

TMD3N80G/TMU3N80GFeaturesVDSS = 880 V @Tjmax Low gate chargeID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC QualificationD-PAK DI-PAKGSDevice Package Marking RemarkTMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen FreeAbsolute Maximum Ratings Parameter
tmd3n90 tmu3n90.pdf

TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A
tmd3n50az tmu3n50az.pdf

TMD3N50AZ(G)/TMU3N50AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
tmd3n40zg tmu3n40zg.pdf

TMD3N40ZG/TMU3N40ZGFeaturesVDSS = 440 V @Tjmax Low gate chargeID = 2A 100% avalanche testedRDS(on) = 3.4 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performanceDD-PAKI-PAKGSDevice Package Marking RemarkTMD3N40ZG/TMU3N40ZG D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG Halogen Free
Datasheet: TMU18N20Z , TMU2N40 , TMU2N60AZ , TMU2N60Z , TMU2N65AZ , TMU3N40ZG , TMU3N50AZ , TMU3N50Z , IRFZ24N , TMU3N90 , TMU4N60 , TMU4N60AZ , TMU4N65AZ , TMU4N65Z , TMU5N40ZG , TMU5N50 , TMU5N50G .
History: R5011FNX | SGSP317 | STW20N90K5 | SRADM1007 | VP2450N8 | PDN3916S | LNG2N65
Keywords - TMU3N80G MOSFET datasheet
TMU3N80G cross reference
TMU3N80G equivalent finder
TMU3N80G lookup
TMU3N80G substitution
TMU3N80G replacement
History: R5011FNX | SGSP317 | STW20N90K5 | SRADM1007 | VP2450N8 | PDN3916S | LNG2N65



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