IRFU5410 Datasheet and Replacement
Type Designator: IRFU5410
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 58(max) nC
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
Package: TO251
IRFU5410 Datasheet (PDF)
irfr5410pbf irfu5410pbf.pdf
PD -95314AIRFR5410PbFIRFU5410PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-ChannelDVDSS = -100Vl Surface Mount (IRFR5410)l Straight Lead (IRFU5410)l Advanced Process Technology RDS(on) = 0.205Gl Fast Switchingl Fully Avalanche RatedID = -13ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tech
irfu5410.pdf
isc P-Channel MOSFET Transistor IRFU5410FEATURESStatic drain-source on-resistance:RDS(on)205mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -100
irfr540zpbf irfu540zpbf.pdf
PD - 96141BIRFR540ZPbFFeaturesIRFU540ZPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl 175C Operating TemperatureDl Fast SwitchingVDSS = 100Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-Freel Halogen-FreeRDS(on) = 28.5mGDescriptionID = 35AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achiev
irfu540z.pdf
APPROVEDPD - TBDAUTOMOTIVE MOSFETIRFR540ZIRFU540ZFeatureslAdvanced Process TechnologyHEXFET Power MOSFETlUltra Low On-ResistanceDl175C Operating TemperatureVDSS = 100VlFast SwitchinglRepetitive Avalanche Allowed up to TjmaxRDS(on) = 28.5mGDescriptionID = 35ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET utilizes the l
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